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High Breakdown Voltage,Fully Depleted完耗型光電二極體
    發布時間: 2020-06-05 16:15    
OSI
OSI
These Large Active Area High Speed Detectors can be fully depleted to achieve the lowest possible junction capacitance for fast response times. They may be operated at a higher reverse voltage, up to the maximum allowable value, for achieving even faster response times in nano seconds. The high reverse bias at this point, increases the effective electric field across the junction, hence increasing the charge collection time in the depleted region. Note that this is achieved without the sacrifice for the high responsivity as well as active area.
These Large Active Area Radiation Detectors can also be fully depleted for applications measuring high energy X-rays, X-rays as well as high energy particles such as electrons, alpha rays and heavy ions. These types of radiation can be measured with two different methods: indirect and direct.
Fully Depleted Photodiodes 特點:
  • 大型活動區域
  • 完全耗盡
  • 反應快
  • 超低暗電流 
  • 低電容
  • 高擊穿電壓
  • 可安裝閃爍體
Fully Depleted Photodiodes 應用:
  • 雷射應用
  • 控制系統
  • 電子檢測
  • 高能物理
  • 醫療儀器
完耗型光電探測二極體(Fully Depleted Photodiodes)
服務熱線:886-2-2655-2200  業務咨詢:151 / 維修校正:185
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