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InGaAs Photodiode-FCI-InGaAs-WCER-LR
    發布時間: 2020-06-08 14:00    
OSI
OSI

InGaAs Photodiode FCI-InGaAs-WCER-LR ∣ OSI

銦鎵砷陶瓷封裝光電探測器-Broadband Anti-Reflection Coated InGaAs Photodiodes
OSI Optoelectronics's latest product line includes a very low reflectance photodiode. Designed for telecommunication applications, the InGaAs/InP photodiode has a typical optical reflectance of less than .6% from 1520nm to 1620nm. This ultra low reflectance over the wide wavelength range was achieved by depositing a proprietary multi-layered Anti-Reflection coating directly onto the surface of the InGaAs/InP photodiode.
FCI-InGaAs-WCER-LR銦鎵砷陶瓷封裝光電探測器 特點：
  • Reflectance Less than 0.6%
  • Low Noise
  • High Responsivity
  • High Speed
  • Spectral Range 900nm to 1700nm
FCI-InGaAs-WCER-LR銦鎵砷陶瓷封裝光電探測器 應用：
  • Wavelength Locker / Wavelength Monitoring
  • Lasers Back Facet Monitoring
  • DWDM
  • Instrumentation
InGaAs Photodiodes FCI-InGaAs-WCER-LR銦鎵砷陶瓷封裝光電探測器
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